Apparatus for removing a photoresist and apparatus for manufacturing a comiconductor device

ABSTRACT

An apparatus for fabricating a semiconductor device may include a nozzle having a slit configured to eject solution and an ultraviolet emitter provided outside the nozzle. The ultraviolet emitter and the nozzle may be configured to move horizontally. The slit may be provided on a bottom surface of the nozzle.

CROSS-REFERENCE TO RELATED APPLICATIONS

This U.S. non-provisional patent application is a Divisional Applicationof U.S. application Ser. No. 16/715,123, filed on Dec. 16, 2019, whichclaims priority under 35 U.S.C. § 119 to Korean Patent Application No.10-2019-0058816, filed on May 20, 2019, in the Korean IntellectualProperty Office, the entire contents of which are hereby incorporated byreference.

BACKGROUND OF THE INVENTION

The present disclosure relates to an apparatus for fabricating asemiconductor device and a method of fabricating a semiconductor deviceusing the same, and in particular, to an apparatus, which is used toremove a photoresist pattern, and a method of removing a photoresistpattern using the same.

In a process of fabricating a semiconductor device, a photolithographytechnology is widely used to perform a patterning process on a layer. Ifa process of patterning a layer using a photoresist pattern is finished,the photoresist pattern is removed. Since a semiconductor device isintegrated on a large area substrate, a removal rate of the photoresistpattern on the substrate may vary from position to position. In the casewhere the photoresist pattern is removed using an acid material, such assulfuric acid, waste water may be produced.

SUMMARY

Some embodiments of the inventive concepts provide a method of removinga photoresist pattern at a high removal rate and an apparatus for thisremoval process.

According to an embodiment of the inventive concepts, an apparatus forfabricating a semiconductor device may include a nozzle having a slit.The nozzle configured to eject a solution through the slit and anultraviolet emitter provided outside the nozzle. The ultraviolet emitterand the nozzle may be configured to move horizontally. The slit may beprovided on a bottom surface of the nozzle.

According to an embodiment of the inventive concepts, an apparatus forremoving a photoresist may include an arm configured to perform ahorizontal reciprocating motion, a nozzle coupled to the arm, and aultraviolet emitter coupled to the arm and provided outside the nozzle.The nozzle may have a slit, which is provided in a bottom surface of thenozzle and is configured to eject solution.

According to an embodiment of the inventive concepts, an apparatus forfabricating a semiconductor device may include a nozzle having a slit,an ultraviolet emitter provided outside of the nozzle, a supportingplate, and a fluid supplying part provided in the supporting plate andconfigured to spray fluid on the top surface of the supporting plate. Anoutlet of the fluid supplying part may be exposed above a top surface ofthe supporting plate, and the bottom surface of the nozzle and theultraviolet emitter may be spaced apart from a top surface of thesupporting plate.

According to an embodiment of the inventive concepts, a method offabricating a semiconductor device may include loading a substrate, onwhich a photoresist pattern is formed, on a supporting plate, andremoving the photoresist pattern. The loading of the substrate mayinclude disposing a nozzle having a slit and an ultraviolet emitter tobe spaced apart from a top surface of the substrate. The removing of thephotoresist pattern may include ejecting solution onto the photoresistpattern from the slit of the nozzle and irradiating ultraviolet lightonto the ejected solution using the ultraviolet emitter. The ultravioletemitter may perform a horizontal reciprocating motion, during theirradiating of the ultraviolet light.

BRIEF DESCRIPTION OF THE DRAWINGS

Example embodiments will be more clearly understood from the followingbrief description taken in conjunction with the accompanying drawings.The accompanying drawings represent non-limiting, example embodiments asdescribed herein.

FIG. 1A is a perspective view illustrating an apparatus for fabricatinga semiconductor device, according to an embodiment of the inventiveconcepts.

FIG. 1B is a plan view illustrating a substrate, which is loaded on anapparatus for fabricating a semiconductor device, according to anembodiment of the inventive concepts.

FIG. 1C is a diagram illustrating an operation of the apparatus for FIG.1B, which is performed during a process of fabricating a semiconductordevice.

FIG. 2A is a perspective view illustrating a nozzle, an ultravioletemitter, and an arm, according to an embodiment of the inventiveconcepts.

FIG. 2B is a perspective view illustrating a nozzle, to which a conduitis connected, according to an embodiment of the inventive concepts.

FIG. 3A is an enlarged plan view of a region ‘I’ of FIG. 1B andillustrates a nozzle and an ultraviolet emitter, according to anembodiment of the inventive concepts.

FIG. 3B is a plan view illustrating a connecting portion according to anembodiment of the inventive concepts.

FIG. 3C is a plan view illustrating a nozzle according to an embodimentof the inventive concepts.

FIG. 4 is a flow chart illustrating a method of fabricating asemiconductor device, according to an embodiment of the inventiveconcepts.

FIGS. 5A to 5C are diagrams illustrating a method of fabricating asemiconductor device, according to an embodiment of the inventiveconcepts.

FIG. 6A is a sectional view illustrating an example of a structure, inwhich an upper layer is formed.

FIG. 6B is a sectional view illustrating a structure including an upperlayer, which is formed by a process according to an embodiment of theinventive concepts.

FIG. 7 is a diagram illustrating an apparatus for fabricating asemiconductor device, according to an embodiment of the inventiveconcepts, and a method of fabricating a semiconductor device using thesame.

FIG. 8A is a plan view illustrating an apparatus for fabricating asemiconductor device, according to an embodiment of the inventiveconcepts, and a method of fabricating a semiconductor device using thesame.

FIG. 8B is a sectional view taken along a line of FIG. 8A.

FIG. 8C is a sectional view taken along a line V-V′ of FIG. 8A.

It should be noted that these figures are intended to illustrate thegeneral characteristics of methods, structures and/or materials utilizedin certain example embodiments and to supplement the written descriptionprovided below. These drawings are not to scale and may not preciselyreflect the precise structural or performance characteristics of anygiven embodiment, and should not be interpreted as defining or limitingthe range of values or properties encompassed by example embodiments.For example, the relative thicknesses and positioning of molecules,layers, regions and/or structural elements may be reduced or exaggeratedfor clarity. The use of similar or identical reference numbers in thevarious drawings is intended to indicate the presence of a similar oridentical element or feature.

DETAILED DESCRIPTION

In the present specification, the same reference number will be used torefer to the same element. Hereinafter, an apparatus for fabricating asemiconductor device according to an embodiment of the inventiveconcepts and a method of fabricating a semiconductor device using thesame will now be described with reference to the accompanying drawings.

FIG. 1A is a perspective view illustrating an apparatus for fabricatinga semiconductor device, according to an embodiment of the inventiveconcepts. FIG. 1B is a plan view illustrating a substrate, which isloaded on an apparatus for fabricating a semiconductor device, accordingto an embodiment of the inventive concepts. FIG. 1C is a diagramillustrating an operation of the apparatus for FIG. 1B, which isperformed during a process of fabricating a semiconductor device. FIG.2A is a perspective view illustrating a nozzle, an ultraviolet emitter,and an arm, according to an embodiment of the inventive concepts. FIG.2B is a perspective view illustrating a nozzle, to which conduits areconnected, according to an embodiment of the inventive concepts.

Referring to FIGS. 1A, 1B, 1C, 2A, and 2B, an apparatus for fabricatinga semiconductor device may include a supporting unit 100, a nozzle 200,an ultraviolet emitter 300, and an arm 400. The fabrication apparatusmay further include a connecting portion 500, and the connecting portion500 may include a first connecting portion 510 and a second connectingportion 520. Preparing the fabrication apparatus may include preparingthe supporting unit 100, preparing the arm 400, to which the nozzle 200and the ultraviolet emitter 300 of FIG. 2A are coupled, and connectingconduits 290 to the nozzle 200, as shown in FIG. 2B.

The fabrication apparatus may be used to remove an organic material,such as a photoresist material. As an example, the fabrication apparatusmay be an apparatus for removing a photoresist. Hereinafter, atechnology of removing a photoresist pattern using the fabricationapparatus will be described, but the use of the fabrication apparatusaccording to an embodiment of the inventive concepts is not limited tothis purpose.

The supporting unit 100 may include a supporting plate 110, supportingpins 130, a rotation driver 150, and a supporting rod 155. As shown inFIGS. 1B and 1C, the supporting plate 110 may be configured to support asubstrate 800. In other words, the substrate 800 may be loaded on thesupporting plate 110. The substrate 800 may be a semiconductor wafer.The substrate 800 may have a center region R1 and an edge region R2,when viewed in a plan view. The edge region R2 of the substrate 800 mayenclose the center region R1. The edge region R2 of the substrate 800may be closer to a side surface of the substrate 800 than the centerregion R1. The supporting plate 110 may have a center region and an edgeregion, when viewed in a plan view. The center region R1 of thesubstrate 800 may correspond to the center region of the supportingplate 110, and the edge region R2 of the substrate 800 may be providedon the edge region of the supporting plate 110. For example, the edgeregion of the supporting plate 110 may surround the center region. Theedge region of the supporting plate 110 may be closer to an outersidewall of the supporting plate 110 than the center region.

The supporting pins 130 may be disposed on a top surface 110 a of thesupporting plate 110. The supporting pins 130 may be provided on theedge region of the supporting plate 110. The supporting pins 130 may bespaced apart from each other. The substrate 800 may be disposed on andfastened to the supporting pins 130. The supporting pins 130 may includean insulating material, but the inventive concepts is not limited tothis example.

The rotation driver 150 may be provided on a bottom surface of thesupporting plate 110. The rotation driver 150 may include, for example,a motor. The rotation driver 150 may be connected to the supportingplate 110 through the supporting rod 155. During an operation of thefabrication apparatus, the supporting plate 110 may be configured torotate about a rotating axis (not shown) using a driving force providedfrom the rotation driver 150. The rotating axis may be perpendicular tothe top surface 110 a of the supporting plate 110. As the supportingplate 110 rotates, the substrate 800 may rotate along with thesupporting plate 110.

As shown in FIG. 1A, an internal hole 140 may be provided to penetratethe rotation driver 150, the supporting rod 155, and the supportingplate 110. The internal hole 140 may be provided at the center region ofthe supporting plate 110. A first fluid supplying part 111 (e.g., aspout, tube, pump, pipe, shoot, duct, pipette, etc.) and a second fluidsupplying part 113 may be provided in the internal hole 140. Theinternal hole 140 may serve as a pathway, through which the first fluidsupplying part 111 and the second fluid supplying part 113 pass. Aportion of the first fluid supplying part 111 and a portion of thesecond fluid supplying part 113 may be exposed above the top surface 110a of the supporting plate 110. The first fluid supplying part 111 andthe second fluid supplying part 113 may be used to supply a fluid ontothe top surface 110 a of the supporting plate 110.

An arm driver 410 may be disposed near a side portion of the supportingunit 100. The arm driver 410 may include a motor. The arm 400 may beconnected to the arm driver 410 and may be spaced apart from thesupporting unit 100. The arm 400 may include a portion that is disposedon and vertically spaced apart from the top surface 110 a of thesupporting plate 110. The arm 400 may be horizontally moved over a topsurface of the substrate 800 by the driving force of the arm driver 410,as shown in FIGS. 1B and 1C. For example, the arm 400 may be configuredto perform a horizontal motion about the arm driver 410 serving as acenter axis. The horizontal motion of the arm 400 may be a reciprocatingor rotary motion. In the present specification, the expression “thehorizontal motion of an object on the top surface of the substrate 800”means that the object is moved in a direction parallel to the topsurface of the substrate 800 while being spaced apart from the topsurface of the substrate 800, and/or that the object moves horizontallyover the top surface 110 a of the supporting plate 110. The top surface110 a of the supporting plate 110 may be substantially parallel to thetop surface of the substrate 800.

As an example, in the case where the supporting plate 110 is fixed, thearm 400 may perform a horizontal reciprocating motion between a firstedge position and a second edge position. The center region of thesupporting plate 110 may disposed between the first edge position and asecond edge position. The first edge position may correspond to a sideportion of the edge region, which is located near the center region ofthe supporting plate 110, and the second edge position may correspond toanother side portion of the edge region, which is located near/aroundthe center region R1. In certain embodiments, the arm 400 may perform ahorizontal reciprocating motion between the first edge position and acenter position above the center region of the supporting plate 110 whenobserved in a plan view, but may not be moved to the second edgeposition. Hereinafter, the nozzle 200, the ultraviolet emitter 300, thearm 400, and the connecting portion 500 will be described in more detailbelow.

FIG. 3A is an enlarged plan view of a region T of FIG. 1B andillustrates a nozzle and an ultraviolet emitter, according to anembodiment of the inventive concepts.

Referring to FIGS. 1A, 1B, 1C, 2A, 2B, and 3A, the nozzle 200 may havean injection hole 215, a dispenser room 213, and a slit 211. As shown inFIG. 2A, the injection hole 215 may be provided in an upper portion ofthe nozzle 200. The injection hole 215 may penetrate a top surface ofthe nozzle 200. The top surface of the nozzle 200 may be opposite to abottom surface 200 b. In an embodiment, a plurality of the injectionholes 215 may be provided. The injection holes 215 may be spaced apartfrom each other, when viewed in a plan view. As shown in FIG. 2B, theconduits 290 may be connected to or received in the injection holes 215,respectively. The conduits 290 may supply solution into the injectionholes 215. The solution may contain ozone and water. The solution may beused to remove a photoresist material.

The dispenser room 213 may be provided in the nozzle 200 and may beconnected to a plurality of the injection holes 215. Solution suppliedfrom the conduits 290 may be provided to the dispenser room 213 throughthe injection holes 215. The slit 211 may be provided on the bottomsurface 200 b of the nozzle 200. Here, the slit 211 may be connected tothe dispenser room 213 and may be configured to eject the solution.

In some embodiments, since the solution is provided to the slit 211through a plurality of the injection holes 215 spaced apart from eachother, the solution may be uniformly ejected from the entire region ofthe slit 211.

The nozzle 200 may include quartz. The quartz may have a strongcorrosion-resistant property to ozone. Thus, even when the solutioncontains ozone, the nozzle 200 may not be corroded. When the solutionpasses through the slit 211, a relatively high pressure may be exertedon the nozzle 200. Since the quartz has high hardness, the nozzle 200may be prevented from being damaged by the ejection pressure of thesolution, during the operation of the fabrication apparatus.

As shown in FIG. 3A, a length of the nozzle 200 may be greater than awidth of the nozzle 200. A length L1 of the slit 211 may be greater thana width W1 of the slit 211. For example, the length L1 of the slit 211may range from 10 mm to 160 mm, and the width W1 of the slit 211 mayrange from 0.1 mm to 10 mm. The length L1 of the slit 211 may be greaterthan a length L2 of each of the injection holes 215. The width W1 of theslit 211 may be smaller than a width W2 of each of the injection holes215. The length L2 of each of the injection holes 215 may besubstantially equal to the width W2 of a corresponding one of theinjection holes 215. The length of the nozzle 200, the length L1 of theslit 211, and the lengths L2 of the injection holes 215 may be values,which are measured in a direction of a longitudinal axis of the arm 400,when viewed in a plan view. A width of an element may be a value, whichis measured in a direction perpendicular to its length, when viewed in aplan view.

As shown in FIG. 2A, the nozzle 200 may be coupled to the arm 400through the first connecting portion 510. The first connecting portion510 may be provided between the nozzle 200 and the arm 400 and may becoupled to the nozzle 200 and the arm 400. The first connecting portion510 may include, for example, a bracket. In the present specification,an expression “a first element is connected/coupled to a second element”may means that the first element is directly connected/coupled to thesecond element or is indirectly connected/coupled to the second elementthrough other element.

The nozzle 200 may be configured such that it can be horizontally movedalong with the arm 400. For example, the nozzle 200 may be configured toperform a horizontal reciprocating motion between a first region, whichis overlapped with the center region of the supporting plate 110 asshown in FIG. 1B, and a second region, which is overlapped with the edgeregion of the supporting plate 110 as shown in FIG. 1C. Thus, the nozzle200 may eject the solution onto the top surfaces of the center and edgeregions R1 and R2 of the substrate 800. The ejecting/supplying of thesolution onto the top surface of the substrate 800 may includeejecting/supplying the solution onto elements (e.g., a photoresistpattern 820 to be described below) formed the top surface of thesubstrate 800.

The ultraviolet emitter 300 may be provided on the top surface 110 a ofthe supporting plate 110, as shown in FIG. 1A, and may be spaced apartfrom the top surface 110 a of the supporting plate 110. The ultravioletemitter 300 may be provided outside the nozzle 200. The ultravioletemitter 300 may include a light source, such as an ultraviolet lamp. Theultraviolet emitter 300 may have a “U”-shaped section. However, theshape of the ultraviolet emitter 300 is not limited to this example andmay be variously changed. As an example, the ultraviolet emitter 300 mayhave a cylindrical or bar shape. The second connecting portion 520 maybe provided between the ultraviolet emitter 300 and the arm 400 and maybe coupled to the ultraviolet emitter 300 and the arm 400. Theultraviolet emitter 300 may be connected to the arm 400 through thesecond connecting portion 520. The second connecting portion 520 mayinclude, for example, a bracket.

As shown in FIGS. 1B and 1C, the ultraviolet emitter 300 may beconfigured such that it can be horizontally moved along with the arm 400and the nozzle 200. For example, the ultraviolet emitter 300 may beconfigured to perform a horizontal reciprocating motion between a firstposition and a second position, when viewed in a plan view. Here, whenviewed in a plan view, the first position may be a position, at which atleast a portion of the ultraviolet emitter 300 is overlapped with thecenter region of the supporting plate 110, as shown in FIG. 1B, and thesecond position may be closer to the edge region of the supporting plate110 than the first position, as shown in FIG. 1C. Accordingly, theultraviolet emitter 300 may irradiate the ultraviolet light onto the topsurfaces of the center and edge regions R1 and R2 of the substrate 800.Here, the ultraviolet emitter 300 may be configured to further irradiatethe ultraviolet light onto a top surface of a region between the centerand edge regions R1 and R2 of the substrate 800. The ultraviolet lightmay have a wavelength ranging from 10 nm to 400 nm. In an embodiment,the ultraviolet light may have a wavelength ranging from 10 nm to 280nm. The irradiating of the ultraviolet light onto the top surface of thesubstrate 800 may include irradiating the ultraviolet light ontoelements (e.g., a photoresist pattern 820 to be described below) formedon the top surface of the substrate 800.

FIG. 3B is a plan view illustrating a connecting portion according to anembodiment of the inventive concepts and corresponds to an enlarge planview of the region ‘I’ of FIG. 1B. For concise description, a previouslydescribed element may be identified by the same reference number withoutrepeating an overlapping description thereof.

Referring to FIG. 3B, the second connecting portion 520 may be disposedadjacent to the first connecting portion 510. For example, each of thefirst and second connecting portions 510 and 520 may be disposed betweenthe nozzle 200 and the first ultraviolet emitter 300.

The first connecting portion 510 and the second connecting portion 520may be provided to constitute a single object. For example, a singlebracket structure may be used as the connecting portion 500, and theconnecting portion 500 may be coupled to the nozzle 200, the ultravioletemitter 300, and the arm 400. In this case, a portion of the bracketstructure may be referred to as the first connecting portion 510, andanother portion of the bracket structure may be referred to as thesecond connecting portion 520. The first connecting portion 510 and thesecond connecting portion 520 may be connected to each other without anyinterface there between. The nozzle 200, the ultraviolet emitter 300,and the arm 400 may be configured to have substantially the samefeatures as those described above.

FIG. 3C is a plan view illustrating a nozzle according to an embodimentof the inventive concepts and corresponds to an enlarge plan view of theregion ‘I’ of FIG. 1B. For concise description, a previously describedelement may be identified by the same reference number without repeatingan overlapping description thereof.

Referring to FIG. 3C, the nozzle 200 may have the injection hole 215,the dispenser room 213, and the slit 211. In an embodiment, unlike thestructure shown in FIG. 3A, the slit 211 may have a relatively smalllength L1, and the nozzle 200 may be configured to have a singleinjection hole 215. The length L1 of the slit 211 may be greater thanthe width W1. A length L2 of the injection hole 215 may be substantiallyequal to a width W2 of the injection hole 215. The length L1 of the slit211 may be greater than the length L2 of the injection hole 215. Thewidth W1 of the slit 211 may be smaller than the width W2 of theinjection hole 215. The number of the injection hole 215 may not belimited to FIGS. 3A to 3C and may be variously changed depending on thelength L1 of the slit 211. For convenience in illustration anddescription, the nozzle 200 will be supposed to have a plurality of theinjection holes 215, in all figures, except FIG. 3C.

Hereinafter, a method of fabricating a semiconductor device, using theapparatus according to an embodiment of the inventive concepts, will bedescribed in more detail below.

FIG. 4 is a flow chart illustrating a method of fabricating asemiconductor device, according to an embodiment of the inventiveconcepts. FIGS. 5A to 5C are diagrams illustrating a method offabricating a semiconductor device (in particular, a photoresist removalprocess), according to an embodiment of the inventive concepts. Forexample, FIGS. 5A, 5B, and 5C are sectional views, which arerespectively taken along lines and IV-IV′ of FIG. 1B. The followingdescription will be partly given, based on FIGS. 1A, 1B, 1C, 2A, 2B, and3A.

Referring to FIGS. 4, 5A, 5B, and 5C, a method of fabricating asemiconductor device may include a process of removing the photoresistpattern 820 using the fabrication apparatus. The method of fabricating asemiconductor device may include preparing the fabrication apparatus (inS100), loading the substrate 800, on which the photoresist pattern 820is formed, on the supporting plate 110 (in S200), removing thephotoresist pattern 820 (in S300), and unloading the substrate 800 (inS400).

As described above, the preparing of the fabrication apparatus (in S100)may include preparing the supporting unit 100, preparing the arm 400, towhich the nozzle 200 and the ultraviolet emitter 300 of FIG. 2A arecoupled, and connecting the conduits 290 to the nozzle 200, as shown inFIG. 2B. The substrate 800 may be loaded on the supporting plate 110 (inS200). The substrate 800 may be a substrate, on which a lower layer 810and the photoresist pattern 820 are formed. The lower layer 810 and thephotoresist pattern 820 may be stacked on a top surface 800 a of thesubstrate 800. Although not shown, at least one layer may be interposedbetween the substrate 800 and the lower layer 810. The lower layer 810may be a layer, which is patterned using the photoresist pattern 820.The photoresist pattern 820 may be a layer containing an organicmaterial, and the organic material may have carbon-carbon bonds.

The loading of the substrate 800 on the supporting plate 110 (in S200)may further include disposing the nozzle 200 and the ultraviolet emitter300 to be spaced apart from the top surface 800 a of the substrate 800.

The removal of the photoresist pattern 820 (in S300) may includeejecting a solution 900 from the slit 211 of the nozzle 200 onto thesubstrate 800 (in S310), irradiating an ultraviolet light onto theejected solution 900 (in S320), and spraying a fluid 700 onto a bottomsurface of the substrate 800 to heat the substrate 800 (in S330). Theejecting of the solution 900 onto the substrate 800 (in S310), theirradiating of the ultraviolet light onto the ejected solution 900 (inS320), and the heating of the substrate 800 (in S330) may be performedafter the loading of the substrate 800 (in S200).

The nozzle 200 may supply the solution 900 onto the top surface 800 a ofthe substrate 800. In other words, the solution 900 from the slit 211 ofthe nozzle 200 may be ejected onto the substrate 800 (in S310). Thesolution 900 may contain water, in which ozone is dissolved. Due to itschemical instability, the ozone may produce radicals. The radicals mayexhibit high reactivity and may cut covalent bonds in a materialconstituting the photoresist pattern 820, as written in the followingreaction formula 1. For example, the radicals may be used to cut thecarbon-carbon bonds of the photoresist pattern 820. Thus, thephotoresist pattern 820 may be removed.OH+RH→·R+H₂OR+O₂→·RO₂→CO₂+H₂O  [Reaction Formula 1]

In the reaction formula 1, RH may be an organic material constitutingthe photoresist pattern 820. R may include a substituted orunsubstituted hydrocarbon having 1 to 100,000,000 carbon atoms. Theradicals may not react with the lower layer 810 or may have a very lowreactivity to the lower layer 810. Thus, the lower layer 810 may remain,when the removal process of the photoresist pattern 820 is finished.

In the case where an acidic material is used to remove the photoresistpattern 820, waste water may be produced. The acidic material mayinclude sulfuric acid. In some embodiments, radicals, which are leftduring the removal process of the photoresist pattern 820, may bereacted with each other and may disappear spontaneously. In this case,it may be possible to prevent or suppress the waste water from beingproduced through the removal process of the photoresist pattern 820.

In the case where the slit 211 and the dispenser room 213 are omittedand the solution 900 is directly ejected from the injection hole 215 ofthe nozzle 200, the solution 900 may be concentrated onto a specificregion (e.g., the center region R1) of the substrate 800. A removal rateof the photoresist pattern 820 may vary depending on a position of thephotoresist pattern 820. For example, the removal rate of thephotoresist pattern 820 on the edge region R2 of the substrate 800 maybe slower than the removal rate of the photoresist pattern 820 on thecenter region R1 of the substrate 800. In this case, the photoresistpattern 820 may remain on the edge region R2 of the substrate 800, afterthe removal process of the photoresist pattern 820.

In some embodiments, the solution 900 may be ejected from the slit 211of the nozzle 200, and, as shown in FIG. 5B, the slit 211 may have arelatively long length L1. The slit 211 may be overlapped with thecenter and edge regions R1 and R2 of the substrate 800. The solution 900may be supplied onto the photoresist pattern 820 on the center region R1of the substrate 800 and onto the photoresist pattern 820 on the edgeregion R2. The removal rate of the photoresist pattern 820 on the edgeregion R2 of the substrate 800 may be equal or similar to the removalrate of the photoresist pattern 820 on the center region R1 of thesubstrate 800.

In the case where the length L1 of the slit 211 is smaller than 10 mm,the solution 900 may be ejected with an excessively high pressure. Underthis high pressure condition, the radicals may be reacted to each otherand thereby may be spontaneously decomposed. The ejected solution 900may have a low content ratio of radicals. Thus, the removal rate of thephotoresist pattern 820 may be reduced. In the case where the length L1of the slit 211 is greater than 160 nm, a portion of the slit 211 may belocated over the outside of the substrate 800, during the horizontalmotion of the nozzle 200 of FIGS. 1B and 1C. The solution 900 may beejected to the outside of the substrate 800, and this may lead to areduction in process efficiency of the process. In some embodiments, theslit 211 may have the length L1 ranging from 10 mm to 160 nm, and inthis case, the photoresist pattern 820 may be efficiently removed at ahigh removal rate.

In the case where the width W1 of the slit 211 is smaller than 0.1 mm(as shown in FIG. 5A), the solution 900 may be ejected with anexcessively high pressure. In the case where the width W1 of the slit211 is greater than 1 mm, the solution 900 may be ejected with anexcessively low pressure and may lead to a reduction in processefficiency of the process. In some embodiments, the slit 211 may havethe width W1 ranging from 0.1 mm to 1 mm.

In some embodiments, as shown in FIG. 5B, at least one of the injectionholes 215 may be overlapped with the edge region R2 of the substrate800, and at least another of the injection holes 215 may be overlappedwith the center region R1 of the substrate 800. Since the solution 900is transferred to the slit 211 through a plurality of the injectionholes 215 spaced apart from each other, the solution 900 may beuniformly ejected from the entire region of the slit 211, even when theslit 211 has a long length L1. For example, the solution 900 may beejected from the entire region of the slit 211 with substantially thesame pressure. Thus, the removal rate of the photoresist pattern 820 onthe edge region R2 of the substrate 800 may become more similar to theremoval rate of the photoresist pattern 820 on the center region R1 ofthe substrate 800.

In the removal process of the photoresist pattern 820, the substrate 800may be rotated along with the supporting plate 110. Due to the rotationof the substrate 800, the solution 900 may be uniformly distributed onthe center and edge regions R1 and R2 of the substrate 800.

As shown in FIGS. 1B, 1C, and 5B, during the removal process of thephotoresist pattern 820, the nozzle 200 may be horizontally moved overthe top surface 800 a of the substrate 800 by the arm 400. Thus, thesolution 900 may be ejected onto the top surfaces 800 a of the centerand edge regions R1 and R2 of the substrate 800 in a dispersed manner.This may make it possible to reduce a difference in removal rate betweenthe photoresist pattern 820 on the edge region R2 of the substrate 800and the photoresist pattern 820 on the center region R1 of the substrate800.

A light-emitting surface 300 b of the ultraviolet emitter 300 mayinclude bottom and side surfaces of the ultraviolet emitter 300. Asshown in FIG. 5A, the light-emitting surface 300 b of the ultravioletemitter 300 may be directed toward a gap region between the top surface800 a of the substrate 800 and the bottom surface 200 b of the nozzle200. The ultraviolet emitter 300 may irradiate an ultraviolet light ontothe ejected solution 900 (S220). For example, the ultraviolet emitter300 may irradiate the ultraviolet light onto the ejected solution 900,during the solution 900 ejected from the slit 211 of the nozzle 200travels toward the photoresist pattern 820. Under the irradiation of theultraviolet light, ozone may expedite the production of radicals, aswritten by the following reaction formula 2. Thus, the photoresistpattern 820 may be removed more quickly and more easily. In the reactionformula 2, hv means the ultraviolet light.

In the case where the solution 900 is irradiated with the ultravioletlight before the solution 900 is ejected from the slit 211, producedradicals may be decomposed by pressure, which is exerted thereon whenthe solution 900 is ejected. Thus, the solution 900, which is suppliedonto the photoresist pattern 820, may have a low radical content, andthis may lead to a reduction in removal rate of the photoresist pattern820. In some embodiments, since the ultraviolet emitter 300 is disposedoutside the nozzle 200, the solution 900 may be irradiated with theultraviolet light, after the ejection of the solution 900 from the slit211. Thus, the solution 900 having a high radical content may besupplied onto the photoresist pattern 820. Accordingly, it may bepossible to increase the removal rate of the photoresist pattern 820.

The light-emitting surface 300 b of the ultraviolet emitter 300 may bedirected toward the top surface 800 a of the substrate 800. Theultraviolet light may be further irradiated onto the solution 900 on thephotoresist pattern 820, and thus, radicals may be more quickly producedfrom the solution 900 on the photoresist pattern 820. Accordingly, itmay be possible to increase the removal rate and the process efficiencyin the removal process of the photoresist pattern 820.

The ultraviolet emitter 300 may be horizontally moved along with the arm400, during the irradiation of the ultraviolet light, as shown in FIGS.1B, 1C, and 5C. Thus, the ultraviolet light may irradiate onto thecenter and edge regions R1 and R2 of the substrate 800. This may make itpossible to reduce a difference in removal rate between the photoresistpattern 820 on the edge region R2 of the substrate 800 and thephotoresist pattern 820 on the center region R1 of the substrate 800.

The fluid 700 may be sprayed onto the bottom surface of the substrate800 to heat the substrate 800 (in S230). The first fluid supplying part111 may spray the fluid 700 onto a gap region between the top surface110 a of the supporting plate 110 and the bottom surface of thesubstrate 800, during the removal process of the photoresist pattern820, as shown in FIG. 5A. An outlet 111Z of the first fluid supplyingpart 111 may be disposed over the center region of the supporting plate110. The outlet 111Z of the first fluid supplying part 111 may beextended parallel to a direction that is substantially perpendicular tothe top surface 110 a of the supporting plate 110. The fluid 700 may bewater, such as deionized water. The fluid 700 may be sprayed at atemperature equal to or greater than 65° C. and less than 100° C. Thefluid 700 may be in physical contact with the substrate 800. As anexample, the fluid 700 sprayed from the first fluid supplying part 111may be in contact with a bottom surface of a first portion of thesubstrate 800, and here, the first portion may correspond to the centerregion R1. Thus, heat energy may be transferred to the photoresistpattern 820 and the solution 900 through the substrate 800. In thiscase, the process temperature of the removal process of the photoresistpattern 820 may be increased, and this may make it possible to increasean amount of the photoresist pattern 820 to be removed per unit timeperiod. In other words, the removal rate of the photoresist pattern 820may be increased. If the fluid 700 is sprayed at a temperature lowerthan 65° C., the removal rate of the photoresist pattern 820 may not beincreased sufficiently.

A first gas supplying part 121 may be disposed adjacent to the firstfluid supplying part 111. An outlet of the first gas supplying part 121may be exposed above the top surface 800 a of the substrate 800 and maybe disposed near the outlet 111Z of the first fluid supplying part 111.The first gas supplying part 121 may spray an inert gas toward the fluid700, when the fluid 700 is sprayed from the first fluid supplying part111. The fluid 700 may be prevented from reentering into the first fluidsupplying part 111 by the inert gas. In an embodiment, a nitrogen gasmay be used as the inert gas.

The second fluid supplying part 113 may spray the fluid 700 into a gapregion between the top surface 110 a of the supporting plate 110 and thebottom surface of the substrate 800. The fluid 700 may include water,such as deionized water, and may be sprayed at a temperature equal to orgreater than 65° C. and less than 100° C. Since the fluid 700 isadditionally sprayed from the second fluid supplying part 113, it may bepossible to further increase the removal rate of the photoresist pattern820.

The second fluid supplying part 113 may be spaced apart from the firstfluid supplying part 111 and may be closer to the edge region of thesupporting plate 110 than the first fluid supplying part 111. An outlet113Z of the second fluid supplying part 113 may be exposed above the topsurface 110 a of the supporting plate 110. The outlet 113Z of the secondfluid supplying part 113 may be provided to be closer to the edge regionof the supporting plate 110 than the outlet 111Z of the first fluidsupplying part 111. For example, the smallest distance between theoutlet 113Z of the second fluid supplying part 113 and an outer sidewall110 c of the supporting plate 110 may be smaller than the smallestdistance between the outlet 111Z of the first fluid supplying part 111and the outer sidewall 110 c of the supporting plate 110.

The outlet 113Z of the second fluid supplying part 113 may be extendedin a direction that is inclined at an angle to the top surface 110 a ofthe supporting plate 110. The outlet 113Z of the second fluid supplyingpart 113 may be tilted to be away from the outlet 111Z of the firstfluid supplying part 111 in an upward direction. As an example, theoutlet 113Z of the second fluid supplying part 113 may be tilted towardthe edge region R2 of the substrate 800 or the edge region of thesupporting plate 110. Thus, the second fluid supplying part 113 maybring the fluid 700 into contact with a bottom surface of a secondportion of the substrate 800. The second portion may be closer to theside surface of the substrate 800 than the center region R1 of thesubstrate 800 and may correspond to a region adjacent to the edge regionR2 or the edge region R2. The fluid 700 may supply heat energy to theedge region R2 of the substrate 800. The removal rate of the photoresistpattern 820 on the edge region R2 of the substrate 800 may be increased.A plurality of the second fluid supplying parts 113 may be provided tobe spaced apart from each other. Thus, the photoresist pattern 820 maybe uniformly removed from the substrate 800, without a positionalvariation. Although not shown, a drain portion may be provided on theouter sidewall 110 c of the supporting plate 110 and may discharge thefluid 700, which remains after the reaction. In an embodiment, a singlesecond fluid supplying part 113 may be provided, unlike the illustratedstructure. In certain embodiments, the second fluid supplying part 113may not be provided.

When the fluid 700 is sprayed from the second fluid supplying part 113,a second gas supplying part 123 may spray an inert gas toward the fluid700. Due to the inert gas, the sprayed fluid 700 may be prevented fromreentering into the second fluid supplying parts 113 and may easily flowtoward the drain portion. The second gas supplying part 123 and thesecond fluid supplying part 113 may be provided in pair. For example,the number of the second gas supplying parts 123 may be the same as thenumber of the second fluid supplying parts 113, and the second gassupplying part 123 may be disposed adjacent to the second fluidsupplying part 113.

When the removal of the photoresist pattern 820 (in S300) is finished, acleaning process may be further performed on the substrate 800. Thecleaning process may include supplying distilled water onto thesubstrate 800 to remove residues and drying the distilled water. Theresidues may include the remaining solution 900 and a residual materialof the removed photoresist pattern 820. The drying of the distilledwater may be performed using an inert gas, such as a nitrogen gas. Thesubstrate 800 may rotate at a first revolutions per minute (RPM), duringthe removal of the photoresist pattern 820 (in S300) described above,and the substrate 800 may rotate at a second RPM, during the drying ofthe distilled water. The second RPM may be greater than the first RPM.For example, the first RPM may range from 100 rpm to 1000 rpm, and thesecond RPM may range from 1100 rpm to 2000 rpm.

Thereafter, the substrate 800 may be unloaded from the supporting plate110 (in S400).

FIG. 6A is a sectional view illustrating an example of a structure, inwhich an upper layer is formed.

Referring to FIG. 6A, a photoresist removal process may be performed.Unlike the process described above, the solution 900 may be directlyejected through the injection hole 215 of the nozzle 200, during thephotoresist removal process. For example, the nozzle 200 may not havethe slit 211 and the dispenser room 213. The nozzle 200 may not performa horizontal motion, and the ultraviolet emitter 300 may be omitted. Inthis case, the photoresist pattern 820 may be removed at a low rate andin a non-uniform manner depending on a position on the substrate 800. Inthis case, the photoresist pattern 820 may remain on the edge region R2of the substrate 800, after the removal process of the photoresistpattern 820. An upper layer 830 may be formed on the lower layer 810 tocover the remained photoresist pattern 820. The photoresist pattern mayremain between the upper layer 830 and the lower layer 810. The remainedphotoresist pattern 820 may serve as an unintended contamination ordefect source, during a subsequent process.

FIG. 6B is a sectional view illustrating a structure including an upperlayer, which is formed by a process according to an embodiment of theinventive concepts. The following description of FIGS. 6A and 6B will bepartly given based on FIGS. 5A to 5C.

Referring to FIG. 6B, a photoresist removal process may be performed bythe method described with reference to FIGS. 5A to 5C. In someembodiments, the photoresist pattern 820 may be quickly removed. Theremoval rate of the photoresist pattern 820 on the edge region R2 of thesubstrate 800 may be substantially equal to the removal rate of thephotoresist pattern 820 on the center region R1 of the substrate 800.The photoresist pattern 820 may not remain after the photoresist removalprocess. The upper layer 830 may be formed on the lower layer 810 tocover the lower layer 810. The photoresist pattern 820 may not beinterposed between the upper layer 830 and the lower layer 810. Theformation of the upper layer 830 may be performed after the unloading ofthe substrate 800 (in S400) described with reference to FIG. 4 . In thefabricating method according to an embodiment of the inventive concepts,it may be possible to fabricate a semiconductor device with a highreliability.

FIG. 7 is a diagram illustrating a method of fabricating a semiconductordevice, according to an embodiment of the inventive concepts.

Referring to FIG. 7 , the fabrication apparatus may include thesupporting unit 100, the nozzle 200, the ultraviolet emitter 300, andthe arm 400. The supporting unit 100, the nozzle 200, the ultravioletemitter 300, and the arm 400 may be configured to have substantially thesame features as those described above. However, the second fluidsupplying part 113 may be disposed on the edge region of the supportingplate 110. For example, the second fluid supplying part 113 may bedisposed closer to the outer sidewall 110 c of the supporting plate 110than to the center axis of the supporting plate 110, when viewed in aplan view. The second fluid supplying part 113 may be verticallyoverlapped with the edge region R2 of the substrate 800. The fluid 700may be sprayed onto a bottom surface of the edge region R2 of thesubstrate 800 from the outlet 113Z of the second fluid supplying part113. A plurality of the second fluid supplying parts 113 may beprovided. Due to the first fluid supplying part 111 and the second fluidsupplying parts 113, the temperature of the center and edge regions R1and R2 of the substrate 800 may be increased in a uniform manner Thus,the photoresist pattern 820 may be uniformly removed from the substrate800, without a positional variation.

FIG. 8A is a plan view illustrating an apparatus for fabricating asemiconductor device, according to an embodiment of the inventiveconcepts, and a method of fabricating a semiconductor device using thesame. FIG. 8B is a sectional view taken along a line of FIG. 8A. FIG. 8Cis a sectional view taken along a line V-V′ of FIG. 8A.

Referring to FIGS. 4 and 8A to 8C, the fabrication apparatus may includea second ultraviolet emitter 320 and a holding arm 430, in addition tothe supporting unit 100, the nozzle 200, the first ultraviolet emitter300 (hereafter the first ultraviolet emitter), and the arm 400. Theholding arm 430 may be spaced apart from the supporting unit 100. Atleast a portion of the holding arm 430 may be disposed on the topsurface 110 a of the supporting plate 110 and may be spaced apart fromthe top surface 110 a of the supporting plate 110.

The second ultraviolet emitter 320 may be spaced apart from the nozzle200, the ultraviolet emitter 300, and the arm 400. The secondultraviolet emitter 320 may be provided on the top surface 110 a of thesupporting plate 110 and may be spaced apart from the top surface 110 aof the supporting plate 110. A connection structure 530 may be providedbetween the second ultraviolet emitter 320 and the holding arm 430 andmay be coupled to the second ultraviolet emitter 320 and the holding arm430. The second ultraviolet emitter 320 may be connected to the holdingarm 430 through the connection structure 530. The connection structure530 may include, for example, a bracket. The holding arm 430 may providethe second ultraviolet emitter 320 at a fixed position. A light-emittingsurface 320 b of the second ultraviolet emitter 320 may be a bottomsurface of the second ultraviolet emitter 320. The second ultravioletemitter 320 may irradiate an ultraviolet light onto the edge region R2of the substrate 800. Since the second ultraviolet emitter 320 isprovided, the removal rate of the photoresist pattern 820 on the edgeregion R2 of the substrate 800 may be further increased. As an example,the second ultraviolet emitter 320 may not be horizontally moved duringthe removal process of the photoresist pattern 820. The secondultraviolet emitter 320 may include an ultraviolet lamp and may have a“U”-shaped section. The irradiating of the ultraviolet light (in S320)described with reference to FIG. 4 may include irradiating theultraviolet light using the first ultraviolet emitter 300 and the secondultraviolet emitter 320.

The supporting unit 100, the nozzle 200, the first ultraviolet emitter300, and the arm 400 may be configured to have substantially the samefeatures as those described above.

According to an embodiment of the inventive concepts, it may be possibleto increase an amount of a photoresist pattern to be removed during aunit time period. The photoresist pattern on a substrate may beuniformly removed, without a positional variation.

While example embodiments of the inventive concepts have beenparticularly shown and described, it will be understood by one ofordinary skill in the art that variations in form and detail may be madetherein without departing from the spirit and scope of the attachedclaims.

What is claimed is:
 1. A method of removing a photoresist, comprising:ejecting a solution onto the photoresist on a substrate from a slit of anozzle; irradiating ultraviolet light onto the ejected solution using anultraviolet emitter; and spraying a fluid onto a bottom surface of thesubstrate to heat the substrate; wherein the substrate comprises acenter region and an edge region surrounding the center region, the slitof the nozzle overlaps the center region and the edge region of thesubstrate.
 2. The method of claim 1, further comprising horizontalreciprocating moving the nozzle and the ultraviolet emitter spaced aparton the substrate.
 3. The method of claim 1, wherein the solutioncontains ozone.
 4. The method of claim 1, wherein a temperature of thefluid is greater than or equal to 65° C. and less than 100° C.
 5. Themethod of claim 1, wherein a wavelength of the ultraviolet lightirradiated from the ultraviolet emitter is greater than or equal to 10nm and less than 280 nm.
 6. The method of claim 1, further comprisingrotating the substrate during the irradiated the ultraviolet light. 7.The method of claim 1, wherein the fluid sprayed from a first fluidsupplying part, and the first fluid supplying part is located below thecenter region of the substrate.
 8. The method of claim 7, furthercomprising injecting an inert gas toward the fluid from a first gassupplying part, wherein the first gas supplying part is located adjacentto the first fluid supplying part.
 9. The method of claim 8, wherein thefluid sprayed from a second fluid supplying part, and the second fluidsupplying part is located below the edge region of the substrate. 10.The method of claim 9, wherein the second fluid supplying part isprovided in plurality.
 11. The method of claim 9, wherein the secondfluid supplying part comprises an inclined portion with respect to thebottom surface of the substrate.
 12. The method of claim 9, furthercomprising injecting an inert gas toward the fluid from a second gassupplying part, wherein the second gas supplying part is locatedadjacent to the second fluid supplying part.
 13. The method of claim 1,further comprising draining the fluid.
 14. A method of fabricating asemiconductor device, comprising: loading a substrate, on which aphotoresist pattern is formed, on a supporting plate such that a topsurface of the substrate is disposed spaced apart from a nozzle and anultraviolet emitter; and removing the photoresist pattern, wherein theremoving of the photoresist pattern comprising: ejecting a solution ontothe photoresist pattern from a slit of the nozzle; irradiatingultraviolet light onto the ejected solution using the ultravioletemitter; and performing a horizontal reciprocating motion with theultraviolet emitter and the nozzle, and a rotational motion with thesupporting plate and the substrate during the irradiating of theultraviolet light.
 15. The method of claim 14, wherein the removing ofthe photoresist pattern further comprises spraying a fluid onto a bottomsurface of the substrate to heat the substrate, and the fluid is incontact with the bottom surface of the substrate.
 16. The method ofclaim 15, wherein the spraying of the fluid further comprises: sprayingthe fluid from a first fluid supplying part to bring the fluid incontact with a bottom surface of a center region of the substrate; andspraying the fluid from a second fluid supplying part to bring the fluidin contact with a bottom surface of an edge region of the substrate,wherein the edge region of the substrate is closer to a side surface ofthe substrate than the center region.
 17. The method of claim 14,further comprising performing a cleaning process after the removing thephotoresist pattern.
 18. The method of claim 17, wherein the performingthe cleaning process comprises: removing a residue on the substrateusing DI water, and drying the DI water on the substrate.
 19. The methodof claim 17, wherein a number of rotations of the substrate is 100 rpmto 1000 rpm during the removing the photoresist pattern, and a number ofrotations of the substrate is 1100 rpm to 2000 rpm during the performingthe cleaning process.